Phase change memory cell with tubular heater and manufacturing method thereof

摘要

A phase change memory cell includes a phase change region of a phase change material, a heating element (30) of a resistive material, arranged in contact with the phase change region (33') and a memory element (35) formed in said phase change region at a contact area with the heating element (30). The contact area is in the form of a frame that has a width of sublithographic extent (S) and, preferably, a sublithographic maximum external dimension. The heating element (30) includes a hollow elongated portion which is arranged in contact with the phase change region (33').