Ion implantation apparatus and method

摘要

An ion implantation apparatus includes a laser beam irradiation unit which irradiates the surface of a target substrate with laser beam. The angle of an optical axis of the laser beam relative to the surface is adjustable. A reference line defining unit is adapted to define a virtual reference line which coincides with the optical axis of the laser beam when the angle takes a certain value. An ion irradiation unit provides an ion beam on a trajectory which coincides with the reference line.