| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer which can remarkably reduce a contact resistance of a source electrode and a drain electrode in a field effect transistor, by devising the layer structure on the nitride semiconductor side of the wafer, and also to provide its manufacturing method. SOLUTION: The semiconductor wafer has such a structure that a two-dimensional electron gas can be formed in a nitride semiconductor in contact above aluminum nitride gallium. At least the wafer comprises a first substrate 101; a first nitride semiconductor layer 102 of the wurtzite structure which is so formed that a (000-1) nitrogen surface may be a front surface; second nitride semiconductor layers 103 and 104 which are formed on the first nitride semiconductor layer, and contain a larger ratio of aluminum in the composition than the first nitride semiconductor layer; and a third nitride semiconductor layer 105 which is formed on the second nitride semiconductor layer, and has a larger electron affinity than the second nitride semiconductor layer. COPYRIGHT: (C)2006,JPO&NCIPI
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