FLASH MEMORY DEVICE HAVING BAR RESISTANCE MEASURING PATTERN AND METHOD FOR FORMING THE SAME

摘要

A flash memory device having a bar resistance measuring pattern and a method for forming the same are provided to reduce the variation of bar resistance measuring value by directly connecting a contact to a floating gate for measuring the bar resistance. An isolation layer(23) is formed in a substrate(20) to define an active region. A floating gate(26) for measuring bar resistance is filled in the surface of the isolation layer. A control gate pattern(33) is formed on a desired portion of the floating gate. A dielectric film(27) is formed between the floating gate and the control gate pattern. Bar resistance measuring patterns(30) are connected to the floating gate and isolated with the control gate pattern.