发明名称 |
Asymmetric waveguide GaInAs laser diode |
摘要 |
A laser diode is provided. The laser diode has a structure in which reflective index of an n-cladding layer formed on a first face of the active layer is higher than that of a p-cladding layer formed on a second face. This asymmetric waveguide structure suppresses extension of field into the p-cladding layer thus reducing free carrier absorption in the p-cladding layer.
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申请公布号 |
US7113531(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20040794028 |
申请日期 |
2004.03.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG DAE-SUNG;KIM TAK |
分类号 |
H01S5/00;H01S5/20;H01L35/24;H01S3/0941;H01S5/30;H01S5/32;H01S5/343 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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