发明名称 BIAS CIRCUIT FOR POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To have the excellent controllability of a current control (limitation) of a power amplifier during low power, and to broadly improve the temperature characteristics of the power amplifier during the low power. SOLUTION: An emitter of a bipolar transistor 1 for supplying a bias is connected to a base of a bipolar transistor 2 for power via a resistor 5, and the emitter of the bipolar transistor 1 for supplying the bias is connected to a collector of a transistor 3 for controlling power. Also, the emitter of the transistor 3 for controlling power is grounded via a Schottky diode 19 for temperature compensation and a resistor 15, and a power control voltage 13 is applied to the base of the transistor 3 for controlling power via a resistor 14. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006245881(A) 申请公布日期 2006.09.14
申请号 JP20050057246 申请日期 2005.03.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAUCHI HIROYUKI;TAKEHARA HIROYASU;MAEDA MASAHIRO
分类号 H03F1/30;H03F1/02;H03F3/24 主分类号 H03F1/30
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