| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing formation of a side wall film caused, by etching with Ir and IrO<SB>2</SB>as electrode materials and provided with a capacitor of reduced leakage current caused between reduced upper and lower electrodes. SOLUTION: The semiconductor device includes a semiconductor substrate; a lower electrode with a laminated film, constituted of the Ir and the IrO<SB>2</SB>formed above the semiconductor substrate; a capacitive insulating film, formed on the lower electrode and composed of a metallic oxide dielectric body; and an upper electrode, formed on the capacitive insulation film and composed of a noble metal film. The film thickness of the laminated film with the Ir and the IrO<SB>2</SB>is selected to be 100 nm or smaller. COPYRIGHT: (C)2006,JPO&NCIPI
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