| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming means in a sputtering film-forming apparatus for forming a thin film of an oxide compound, which can keep a sputtering film-forming rate constant during film formation with the use of a large-diameter target, without using a physical shielding mechanism such as a mask. SOLUTION: This sputtering film-forming apparatus comprises: two or more passages for introducing and supplying a gas, and openings for spouting the gas, which are separated from each other, and arranged in the side and periphery of the target and in between a target and a substrate to be film-formed, but in a position excluding a region in which high-density plasma is distributed; a mechanism (supply port) capable of supplying a discharge gas, a reactant gas or a mixture gas of the discharge gas and the reactant gas through the respective supply ports; and a mechanism capable of adjusting (changing) the distance between the position of the gas-spouting opening and the surface and end of the target by a millimeter order. The respective ports for introducing and supplying gas are provided with a mass flow capable of controlling a flow rate of the introduced gas and are provided with a controller for the mass flow; and have a mechanism capable of introducing and supplying the gas to each target through a predetermined gas-introducing passage at a predetermined flow rate. COPYRIGHT: (C)2006,JPO&NCIPI
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