| 摘要 |
In a gas containing a fluorine atom in the molecule, etching of a SiN film is performed isotropically; therefore, the width of a sidewall gets smaller and it is difficult to widen the width of an LDD region. A silicon nitride film is formed over a gate electrode, a hydrogen bromide is mainly used as an etching gas, the silicon nitride film only over the gate electrode and the surface of a substrate are removed by an etching method such as ICP (Inductively Coupled Plasma), and the silicon nitride film is simultaneously left only on the side surface part of the gate electrode.
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