发明名称 ORGANIC TFT AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a stable organic TFT hard to change over time and its manufacturing method for manufacturing an element in a simple method of high processibility, and representing such transistor characteristics that carrier mobility is high and on-off ratio is high. SOLUTION: An organic semiconductor material of an organic TFT contains a polymer including a repeated unit represented by a general formula (I). In the formula, Ar<SP>1</SP>and Ar<SP>2</SP>are divalent radical of aromatic hydrocarbon or complex aromatic ring compound, independently. Ar<SP>3</SP>is monovalent radical of aromatic hydrocarbon or complex aromatic ring compound. R<SP>1</SP>-R<SP>8</SP>are radicals selected from among hydrogen atom, halogen atom, alkyl radical, alkoxy radical, and alkylthio radical, independently. X and y are integers of 1-3, independently. If x or y is an integer of 2 or larger, x units of R<SP>3</SP>may be different from each other, and y pieces of R<SP>4</SP>may be different from each other as well. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006237225(A) 申请公布日期 2006.09.07
申请号 JP20050049040 申请日期 2005.02.24
申请人 RICOH CO LTD 发明人 KOSAKA TOSHIYA;SASAKI MASAOMI;AKIYAMA ZENICHI;TORII MASASHI;KAWAMURA SHINICHI;OKADA TAKASHI;NAKAYAMA YOSHINOBU;YAMAGA TAKUMI
分类号 H01L51/05;C08G61/12;H01L29/786 主分类号 H01L51/05
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