发明名称 LASER IRRADIATION METHOD AND EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a laser irradiation method that is excellent in reliability and reproducibility, and forms a high-performance poly-Si thin film. SOLUTION: A substrate 18 having an a-Si film on its surface is scan-irradiated with a pulse laser beam shaped in the form of a line, while the beam is being moved in a short axial direction of the line-shaped laser beam, thus forming an irradiation region 19 with two or more energy densities. From a white flat light source 15, flat light is incident in parallel to the long axial direction of the laser beam, whose reflected light is received by a charged-couple device (CCD) receiving element. The reflected light received by the CCD receiver is analyzed to determine a micro-crystallized threshold value, and on the basis of the determined micro-crystallized threshold value, the energy density of the pulse laser beam for production time irradiation is determined. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006237525(A) 申请公布日期 2006.09.07
申请号 JP20050053921 申请日期 2005.02.28
申请人 NEC LCD TECHNOLOGIES LTD 发明人 OKUMURA NOBU
分类号 H01L21/20;H01L21/268 主分类号 H01L21/20
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