| 摘要 |
A method of operating a memory circuit having a plurality of blocks of memory cells ( 400-404 ) is disclosed. The method includes storing data in the plurality of blocks of memory cells. A first block of memory cells ( 400 ) is selected in response to a first address signal (RA<SUB>Y0</SUB>). A row of memory cells ( 430-436 ) in the first block of memory cells is selected in response to a second address signal (RA<SUB>X0</SUB>). A first voltage is applied to a first power supply terminal ( 412 ) of the first block of memory cells in response to the first address signal. A second voltage different from the first voltage is applied to a first power supply terminal ( 412 ) of another block of memory cells ( 402 ) of the plurality of blocks of memory cells. Data is retained in the other block of memory cells.
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