| 摘要 |
The present invention provides, in one embodiment, a method of fabricating a semiconductor device ( 100 ). In one embodiment, the method includes growing an oxide layer 120 from a substrate 104, 106 over a first dopant region 122 and a second dopant region 128 , implanting a first dopant through the oxide layer 120 , into the substrate 104 in the first dopant region 122 , and adjacent a gate structure 114 , and substantially removing the oxide layer 120 from the substrate within the second dopant region 128 . Subsequent to the removal of the oxide layer 120 in the second dopant region 128 , a second dopant that is opposite in type to the first dopant is implanted into the substrate 106 and within the second dopant region 128 and adjacent a gate structure 114.
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