发明名称 Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same
摘要 There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same. In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.
申请公布号 US7098088(B2) 申请公布日期 2006.08.29
申请号 US20040813233 申请日期 2004.03.31
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;NAKAJIMA SETSUO;KUWABARA HIDEAKI
分类号 G09F9/33;H01L21/84;H01L21/336;H01L21/77;H01L27/12;H01L29/786 主分类号 G09F9/33
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