| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the heat dissipation performance of a resin sealing type semiconductor package and improve the production yield. <P>SOLUTION: A gate terminal connected to a gate pad electrode on the surface of a semiconductor chip 2 and a source terminal 3 connected to a source pad electrode 2s are exposed on a rear surface 6b of a sealing resin section 6. A first portion 5a of a drain terminal 5 connected to a rear surface drain electrode 2d of the semiconductor chip 2 is exposed on the top surface 6a of the sealing resin section 6. A second portion 5b of the drain terminal 5 integrally formed with the first portion 5a is exposed on a rear surface 6b of the sealing resin portion 6. In forming the sealing resin section 6 of the semiconductor device 1, first, the sealing resin portion is formed so as to cover a top surface 5e of the first portion 5a of the drain terminal 5, and after that, the top surface side of the sealing resin portion is polished by liquid honing, thereby exposing the top surface 5e of the first portion 5a of the drain terminal 5 on the top surface 6a of the sealing resin portion 6. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
