发明名称 ELECTRON BEAM DEVICE
摘要 PROBLEM TO BE SOLVED: To increase a beam current in a mapping projection type defect inspecting device having a large visual field, and a lithography device. SOLUTION: Primary electron beams are emitted from an electron gun 1 onto the surface of a sample 6 via a condenser lens 2, an aperture (NA) 3, an irradiation lens 4, and an objective lens 5. The farther electron beams are separated from an optical axis, the larger aberration becomes. However, an appropriate electric field or magnetic field is given by an MOL deflector 7 or an axially symmetric electrode 8 arranged inside the objective lens 5, thus moving the axis of the objective lens in parallel, and hence obtaining a wide visual field. The positive on-axis chromatic aberration of a secondary electron image passing through the objective lens is corrected by a negative on-axis chromatic aberration generated by a chromatic aberration corrector 12. As a result, NA can be increased, the beam current can be increased even if the same resolution is obtained, thus achieving a high-throughput evaluation. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006221870(A) 申请公布日期 2006.08.24
申请号 JP20050032157 申请日期 2005.02.08
申请人 EBARA CORP 发明人 NAKASUJI MAMORU;NOMICHI SHINJI;SATAKE TORU;MURAKAMI TAKESHI;KAGA TORU
分类号 H01J37/153;G03F7/20;H01J37/147;H01J37/28;H01J37/29;H01J37/305;H01L21/027 主分类号 H01J37/153
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