| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a copper bonding wire for a semiconductor device the materials cost of which is inexpensive and excellent in bonding properties, loop controllability, wire deformation, etc. , for a semiconductor with a large diameter for use in a power IC, a semiconductor for which a low cost is top priority, etc. <P>SOLUTION: The bonding wire for a semiconductor device has a core material composed mainly of copper, and a skin layer of conductive metal the composition of which is different from that of the core material and characterized by having a gradient of concentration of copper in the direction of the wire diameter in the skin layer. The concentration of copper is 0.1 mol% or more on the surface of the skin layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
