发明名称 High voltage generator for use in semiconductor memory device
摘要 The present invention generates a boosted voltage by preventing a latch-up phenomenon during an initial operating time, i.e., when a power voltage is initially inputted. The present invention includes a level-detecting block for comparing an high voltage with a high reference voltage and for generating a level detect signal; an oscillating block that is enabled to generate a periodic pump signal based on the level detect signal; a charge-pumping block for performing a pumping operation to generate the high voltage in response to the periodic pump signal; and an initial block for preventing a latch-up phenomenon by minimizing level differences between a power voltage and the high voltage before the power voltage reaches to a predetermined level where the pumping operation is guaranteed.
申请公布号 US2006181334(A1) 申请公布日期 2006.08.17
申请号 US20050320853 申请日期 2005.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 DO CHANG-HO
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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