发明名称 |
Dual gate FinFet |
摘要 |
A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETS. Each FET includes a device gate along one side of a semiconductor (e.g., silicon) fin and a back bias gate along an opposite of the fin. Back bias gate dielectric differs from the device gate dielectric either in its material and/or thickness. Device thresholds can be adjusted by adjusting back bias gate voltage.
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申请公布号 |
US7091566(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20030717737 |
申请日期 |
2003.11.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
ZHU HUILONG;BEINTNER JOCHEN;DORIS BRUCE B.;ZHANG YING |
分类号 |
H01L29/76;H01L21/336;H01L21/84;H01L27/01;H01L27/12;H01L29/78;H01L29/786;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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