Semiconductor integrated circuit apparatus

摘要

A capacitor 12 is formed by laminating a lower electrode 12 b, a dielectric 12 e and an upper electrode 12 t in this order. An inductor 14 is formed as a thin metal wiring of a spiral shape so as to have an inductor component. The inductor 14 is formed in the same wiring layer and of the same metal material as the lower electrode 12 b of the capacitor 12 connected to a base electrode 11 b of a transistor 11 . The DC bias is inputted to the base B of the transistor 11 through the inductor 14 of a spiral shape from the DC bias supply wiring BP, and a radio frequency signal is inputted to the base B of the transistor 11 through the capacitor 12.