| 摘要 |
PROBLEM TO BE SOLVED: To improve margins of operation in reading/writing while suppressing increase of use elements. SOLUTION: A semiconductor storage device is equipped with a driving control circuit which supplies a signal to a word line and a plate line connected to a memory cell array; 1st and 2nd transistors inserted in the word line and the plate line between the memory cell array and the driving control circuit respectively; a 1st capacitor, a 3rd transistor, a 4th transistor and a 2nd capacitor connected in series between the word line and the plate lines which locates between the 1st transistor and the memory cell array and between the 2nd transistor and the memory cell array respectively; 5th and 6th transistors connected in series between connecting points which connect the 1st capacitor and the 3rd transistor, and the 4th transistor and the 2nd capacitor respectively; and circuit power sources which set the connecting points between the 3rd and 4th transistors, and between the 5th and 6th transistor to predetermined potential respectively. COPYRIGHT: (C)2006,JPO&NCIPI
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