| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor device exhibiting a high breakdown voltage under "OFF" state and a low resistance under "ON" state by improving the structure of the high breakdown voltage semiconductor device. SOLUTION: An n<SP>-</SP>impurity diffusion region 4 is formed to cover a source region 3. Consequently, formation of a depletion layer can be accelerated in an n<SP>-</SP>epitaxial layer 2. A high breakdown voltage semiconductor device exhibiting a high breakdown voltage under "OFF" state can thereby be provided. COPYRIGHT: (C)2006,JPO&NCIPI
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