Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head

摘要

A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Omega.mum².