Metal oxide semiconductor transistor producing method for integrated electronic circuit, involves forming two coatings, respectively on silicide portions of source and drain zones, and heating transistor to cause siliconizing reaction

摘要

The method involves forming two coatings (13, 14) sealed with atoms of a metal, respectively on silicide portions (11, 12) of source and drain zones. A layer (200) of the metal is deposited on the gate structure and in the zones, so that a part of the metal is in contact with a silicon gate portion (2). Transistor is heated to cause a siliconizing reaction between the metal and silicon material of the gate portion. An independent claim is also included for an integrated electronic circuit comprising a metal oxide semiconductor (MOS) transistor.