Programmable metallization cell circuit memory for storing data, has data retaining unit applying memory voltage to programmable metallization cell component that stores related states in upper and lower current branches, respectively

摘要

The memory has a programmable metallization cell (PMC) memory cell (1) with a PMC component (2). The component exhibits a hysteresis with respect to an I-U characteristic curve with upper and lower measured current branches. A data retaining unit (5) applies memory voltage to the component for retaining states to be stored. The component is operated for storing related states in upper and lower current branches, respectively. An independent claim is also included for a method of storing data into a programmable metallization cell circuit memory.