发明名称 Semiconductor memory device and corresponding programming method
摘要 A semiconductor cell includes, within a substrate region, four active zones that are mutually laterally isolated, the first active zone to be connected to a first voltage, the second active zone, of an opposite type of conductivity to that of the first active zone, to be connected to a second voltage, the third and fourth active zones being mutually connected via an electrically conducting connection external to the substrate. The value of the binary data item is defined by an implantation of a chosen type in a predetermined part of the substrate region or in the third and fourth active zones.
申请公布号 US2006170063(A1) 申请公布日期 2006.08.03
申请号 US20060340164 申请日期 2006.01.26
申请人 STMICROELECTRONICS SA 发明人 SCHOELLKOPF JEAN-PIERRE
分类号 H01L29/76;H01L21/82 主分类号 H01L29/76
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