| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a crystallinity of the crystallized (re-crystallized) Si layer by laser, and to provide a performance suited to the present IC, in a manufacturing method of a three-dimensional semiconductor device comprising steps of forming an insulating film on a Si layer formed with a circuit of a semiconductor device, laminating a polycrystalline or an amorphous Si layer on the insulating film, re-crystallizing the polycrystalline or amorphous Si layer by irradiation with laser and scanning to form the circuit of another semiconductor device here, and connecting the circuits thus formed. <P>SOLUTION: The method comprises the steps of: flattening insulating films 17 and 26 by CMP; laminating polycrystalline or amorphous Si layers 22 and 32, performing irradiation/scanning with a solid state continuous wave laser beams with energy of 10 J/cm<SP>2</SP>or more per irradiated area; adding hydrogen ion in a dose of 10<SP>14</SP>/cm<SP>2</SP>or more to the Si layers 22 and 32; and then applying heat treatment under a condition of not melting the Si layers 22 and 32. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
