Semiconductor device and fabricating method thereof

摘要

The present invention provides a semiconductor device in which occurrence of disclination caused by steps in a contact portion and steps between pixel electrodes is prevented. A method of fabricating a semiconductor device according to the invention includes forming an insulating film 2 on an electrode 1 a so as to cover the electrode; forming contact holes 2 a and 2 b located on the electrode and concave portions 2 c and 2 d connected to the contact hole; embedding a conductive film 8 in the contact hole and the concave portion and forming a conductive film 8 on the insulating film; and applying the CMP polishing or the etching-back to the conductive film, and thereby forming a pixel electrode made of the conductive films 8 a and 8 b embedded in the contact hole and the concave portion.