| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an orientational thermoelectric thin film which can suppress the generation of particles and has a high thermoelectric conversion efficiency, even if the thin film is 1μm in thickness and is an orientational BiTe-based film, and to provide a thermoelectric device provided with the same. SOLUTION: A Bi<SB>2</SB>Te<SB>3</SB>species film 3 is formed on the upper surface of an insulating film 2 by pulse laser deposition. Because of the pulse laser deposition, a priority oriented film wherein a c-axis direction is directed vertical to the surface of a substrate can be formed even on a film having an amorphous structure without orientation property. A first film 3 is made about 50 nm in thickness, so that the ratio of the surface area occupied by particles on the thermoelectric film can be reduced to 10% or less. Next, a Bi<SB>2</SB>Te<SB>3</SB>thin film 4 is formed on the first film 3 as a second film by sputtering method until a total film thickness of the first film plus the second film becomes about 1μm. The thin film 4 succeeds the orientation property of the thin film 3, thus forming the Bi<SB>2</SB>Te<SB>3</SB>thin film 4 with the oriented c axis. COPYRIGHT: (C)2006,JPO&NCIPI |
