发明名称 |
A NON-VOLATILE MEMORY CELL COMPRISING A DIELECTRIC LAYER AND A PHASE CHANGE MATERIAL IN SERIES |
摘要 |
<p>The invention provides for a nonvolatile memory cell comprising a dielectric material in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volume assists this phase change. By applying high voltage across a dielectric layer, dielectric breakdown occurs, forming a low-resistance rupture region traversing the dielectric layer. This rupture region can serve to concentrate thermal energy in a phase-change memory cell. In a preferred embodiment, such a cell can be used in a monolithic three dimensional memory array.</p> |
申请公布号 |
WO2006078505(A2) |
申请公布日期 |
2006.07.27 |
申请号 |
WO2006US00774 |
申请日期 |
2006.01.11 |
申请人 |
MATRIX SEMICONDUCTOR, INC.;SCHEUERLEIN, ROY E.;HERNER, S. BRAD |
发明人 |
HERNER, S. BRAD |
分类号 |
H01L21/336;G11C7/00;G11C11/39;G11C17/16;H01L21/82;H01L27/24;H01L29/73;H01L45/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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