| 摘要 |
PROBLEM TO BE SOLVED: To improve the uneven thickness of a layer and the lack of surface flatness thereof produced when the layer having a nitride semiconductor light emitting device structure is laminated on a nitride semiconductor substrate while suppressing the cracking thereof. SOLUTION: In this manufacturing method of the nitride semiconductor light emitting device, first the nitride semiconductor substrate is prepared having a stripe-like groove 17 formed therein. An underlying layer 21 consisting of nitride semiconductor is formed on the nitride semiconductor substrate 10 including the side walls of the groove 17 so that crystal planes 16 are formed having an inclination≥53.5°and≤63.4°with respect to the substrate surface. The light emitting device structure 11 consisting of a lower clad layer containing Al, an active layer, and an upper clad layer containing Al is formed on the underlying layer 21. COPYRIGHT: (C)2006,JPO&NCIPI
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