发明名称 Serial bus controller using nonvolatile ferroelectric memory
摘要 A serial bus controller using a nonvolatile ferroelectric memory is provided. The memory controller structure using a nonvolatile ferroelectric register enables control of variable access time according to addresses when data are exchanged through a serial bus. In the serial bus controller according to an embodiment of the present invention, access latency time by addresses is programmed using a nonvolatile ferroelectric register, and address access time is differently controlled depending on the programmed access latency when data are exchanged between a master and a FRAM chip through a serial bus, thereby improving system performance.
申请公布号 US2006158941(A1) 申请公布日期 2006.07.20
申请号 US20060363172 申请日期 2006.02.28
申请人 发明人 KANG HEE B.
分类号 G06F12/14;G06F13/28;G06F12/00;G06F12/02;G06F12/04;G06F13/00;G06F13/16;G06F13/38;G06F13/42;G11C7/10;G11C11/22 主分类号 G06F12/14
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