| 摘要 |
In fabrication of a semiconductor device having plural patterns on a plurality of layers by using complementary divided masks each having alignment marks distributed therein, because of the presence of a plurality of complementary divided mask layers, misalignment between respective layers tends to occur. To solve this problem, divided alignment marks (M 1 a, M 2 a, M 3 a, M 4 a) are formed in respective complementary divided regions corresponding to respective blocks (B 1, B 2, B 3, B 4 ) of complementary divided masks obtained by dividing a stencil mask. By distributing alignment marks to respective complementary divided masks, a positional deviation between respective masks is averaged, thereby enabling to fabricate a semiconductor device in which a large positional deviation between patterns of adjoining layers is eliminated. |
