ß-Ga2o3 single crystal growing method, thin-film single crystal growing method, Ga2o3 light-emitting device, and its manufacturing method

摘要

A method for growing a beta-Ga₂O₃ single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a Ga_zO₃ light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a beta-Ga₂O₃ single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a beta-Ga₂O₃ single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a beta-Ga₂O₃ single crystal is grown on a substrate of a beta-Ga₂O₃ single crystal A light-emitting device comprises an n-type substrate produced by doping a beta-Ga₂O₃ single crystal with an n-type dopant and a p-type layer produced by doping the beta-Ga₂O₃ single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.