| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN system and an SiC system semiconductor device which suppresses the variation in the initial characteristics and the energization degradation. SOLUTION: An etching gas used for plasma etching enters the surface of a semiconductor crystal 12 in the ionized state from the opening of a mask material 13 so as to etch the semiconductor crystal 12 to the extent of only a predetermined depth. Nitrogen gas mixed in the etching gas is given high energy so as to be activated. It reacts with the atom of the semiconductor crystal 12 of an etching side and a wall surface so that nitrogen termination fixation of the bond is carried out. The composition of a surface layer where the nitrogen termination fixation is carried out, for example, becomes Ga<SB>x</SB>N<SB>y</SB>when the semiconductor crystal 12 is a GaN system crystal, and when it is an SiC system crystal, it becomes Si<SB>x</SB>N<SB>y</SB>so that an ultra thin nitride film is formed, and chemical stabilization is attained. On such a crystal face where nitrogen termination fixation is carried out, the corrosion (oxidization) by moisture or oxygen does not advance even in the case of energization to a device, so that the variation in the initial characteristics of a semiconductor device and energization degradation is controlled, and as a result reliability is improved. COPYRIGHT: (C)2006,JPO&NCIPI
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