发明名称 SENSOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a sensor device which reduces a temperature drift in sensor characteristics, and to provide a method of manufacturing the sensor device. <P>SOLUTION: The sensor device 10 includes a sensor body 1 which uses a silicon as a substrate, and an upper seal 2 and a lower seal 3 which also use a silicon as a substrate. An integrated circuit 20 which drives the sensor device 10 forms a laminate with the sensor device 10. The sensor body 1 connects with the circuit pattern 12 of the integrated circuit 20 electrically through a through electric path 4 which penetrates the upper seal 2 and an electrode 5 for packaging provided in the external surface of the upper seal 2. The sensor device 10 is connected with an MID substrate 30 through the integrated circuit 20. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006186357(A) 申请公布日期 2006.07.13
申请号 JP20050365732 申请日期 2005.12.20
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 TSUJI KOJI;SANAGAWA YOSHIHARU;KIRIHARA MASAO;EDA KAZUO;NISHIJIMA YOICHI
分类号 H01L23/02;G01C19/56;G01P9/04;H01L23/08;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/02
代理机构 代理人
主权项
地址