发明名称 |
SENSOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sensor device which reduces a temperature drift in sensor characteristics, and to provide a method of manufacturing the sensor device. <P>SOLUTION: The sensor device 10 includes a sensor body 1 which uses a silicon as a substrate, and an upper seal 2 and a lower seal 3 which also use a silicon as a substrate. An integrated circuit 20 which drives the sensor device 10 forms a laminate with the sensor device 10. The sensor body 1 connects with the circuit pattern 12 of the integrated circuit 20 electrically through a through electric path 4 which penetrates the upper seal 2 and an electrode 5 for packaging provided in the external surface of the upper seal 2. The sensor device 10 is connected with an MID substrate 30 through the integrated circuit 20. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006186357(A) |
申请公布日期 |
2006.07.13 |
申请号 |
JP20050365732 |
申请日期 |
2005.12.20 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
TSUJI KOJI;SANAGAWA YOSHIHARU;KIRIHARA MASAO;EDA KAZUO;NISHIJIMA YOICHI |
分类号 |
H01L23/02;G01C19/56;G01P9/04;H01L23/08;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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