| 摘要 |
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable memory cell transistors disposed at intersections of the data transfer lines and the data select lines. It further includes: a memory cell array block in which the memory cell units are disposed along the data select lines; first source lines, connected to one end of the memory cell units, and aligned along the data select lines; and second source lines electrically connected to the first source lines, and disposed along the data select lines. |
