发明名称 |
Semiconductor device having a capping layer including cobalt and method of fabricating the same |
摘要 |
A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.
|
申请公布号 |
US2006145269(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20060365063 |
申请日期 |
2006.02.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG-WOOK;LEE HYEON-DEOK;PARK IN-SUN;PARK JI-SOON |
分类号 |
H01L21/28;H01L29/94;H01L21/768;H01L23/48;H01L23/485 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|