Solid-state imaging device and radiotion imaging system

摘要

N⁺-type semiconductor regions 12 d are formed on a front surface side of a p³¹ -type layer 12 c of a semiconductor substrate 12 , and these n⁺-type semiconductor and p^--type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12 e is formed on a first insulating layer 13 . The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p^--type layer 12 c and n⁺-type semiconductor regions 12 d) exposed on a light-incident surface of the semiconductor substrate 12 (p^--type layer 12 c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12 e is set at the ground potential.