| 摘要 |
The invention is concerned with a method f alignment for aligning crystal planes of a wafer substrate ( 40 ) to lithographic features thereon, the method characterized in that it includes the steps of: (a) measuring angular orientation of a peripheral flat ( 200 ) of the substrate ( 40 ); (b) measuring a crystallographic plane orientation of the substrate ( 40 ); (c) determining an error angle (phi) between the annular orientation of the flat ( 200 ) and the crystallographic orientation; (d) angularly registering to the flat ( 200 ) in a lithographic tool; (e) rotating the substrate ( 40 ) by the error angle (phi); and (f) defining one or more feature layers on the substrate ( 40 ) using the lithographic tool, thereby angularly aligning the one or more feature layers to the crystallographic plane orientation. The invention is further concerned with an apparatus for performing a method of alignment as claimed in claim 1 , the apparatus comprising: (a) a wafer flat measuring device ( 20 ) for measuring angular orientation of one or more peripheral flats ( 200 ) on a wafer substrate ( 40 ); (b) an X-ray diffractometer for measuring a crystallographic orientation of the substrate ( 40 ); and (c) a wafer chuck ( 100 ) for rotating the substrate relative to the wafer flat measuring device ( 1 ) and the X-ray diffractometer ( 30 ).
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