| 摘要 |
In a method and system for applying a testing voltage signal, a voltage source generates the testing voltage signal that ramps from an initial voltage to an intermediate voltage with a first ramping rate. In addition, the testing voltage then ramps from the intermediate voltage to an end voltage with a second ramping rate, with the first ramping rate being greater than the second ramping rate. The present invention may be applied to particular advantage when the testing voltage signal is applied on a control gate of a flash memory cell for channel erasure of the flash memory cell. In this manner, the testing voltage signal ramps to the end voltage with reduced time for minimizing testing time.
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