| 摘要 |
A charge trap insulator memory device comprises a bottom word line, a P-type float channel formed at the bottom word line and kept at a floating state, a charge trap insulator formed on the P-type float channel, a top word line formed on the charge trap insulator in parallel with the bottom word line, and a N-type drain region and a N-type source region formed at both sides of the float channel. As a result, in the float gate memory device, a retention characteristic is improved, and cell integrated capacity is also increased due to a plurality of float gate cell arrays deposited vertically using a plurality of cell oxide layers.
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