发明名称 METHOD FOR FORMING INSULATING LAYER, HEAT TREATMENT DEVICE, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an insulating layer capable of improving throughput and further reducing a specific permittivity. SOLUTION: The method is used for forming the insulating layer 88 in which minute voids 86 are dispersed on the surface of a workpiece W. The method has a coating film forming process for forming a coating film 82 including a monomer in which a void forming material 84 is dispersed, and/or an organic low molecular compound; a partial skeleton forming process in which a skeleton is formed by partially polymerizing the monomer and/or the organic low molecular compound, by maintaining the heated state of plural pieces of the workpieces for a prescribed period of time after heating them at a temperature in a first temperature zone in a vertically long and heatable treatment container; and a void forming process for forming the insulating layer by generating voids by vaporizing the void forming material, by maintaining the heated state of the plural pieces of the workpieces for a prescribed period of time after continuously heating them at a temperature in a second temperature zone higher than that of in the first temperature zone in the treatment container. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006173235(A) 申请公布日期 2006.06.29
申请号 JP20040361103 申请日期 2004.12.14
申请人 TOKYO ELECTRON LTD 发明人 HISHIYA SHINGO
分类号 H01L21/316;H01L21/768;H01L23/522 主分类号 H01L21/316
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