发明名称 |
Epitaxial structure of gallium nitride series semiconductor device and process of manufacturing the same |
摘要 |
An epitaxial stricture of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitride is formed on the first buffer layer at a second temperature. The second temperature increases up to a third temperature, during which precursors including In(CH<SUB>3</SUB>)<SUB>3 </SUB>and NH<SUB>3 </SUB>are used for surface treatment. A high-temperature gallium nitride is formed at the third temperature. The buffer layer and the way to form such a buffer layer allow improved crystal configuration and lowered defect density, thereby increasing the performance and service life of a semiconductor device.
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申请公布号 |
US2006141753(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20060352204 |
申请日期 |
2006.02.13 |
申请人 |
SUPERNOVA OPTOELECTRONICS CORP. |
发明人 |
HON SCHANG-JING;LAI MU-JEN |
分类号 |
H01L21/20;H01L21/205;H01L29/20 |
主分类号 |
H01L21/20 |
代理机构 |
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