发明名称 |
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
摘要 |
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
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申请公布号 |
US7067846(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20040878282 |
申请日期 |
2004.06.29 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
TAKAHASHI TAKASHI;KAMINISHI MORIMASA;SATO SHUNICHI;ITOH AKIHIRO;JIKUTANI NAOTO |
分类号 |
H01L27/15;H01L33/00;H01L33/02;H01L33/10;H01L33/32 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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