Method of fabricating a semiconductor structure

摘要

A method of fabricating a semiconductor structure is disclosed. The method comprises the steps of: providing an intermediate structure, the intermediate structure comprising a substrate having an insulating layer thereon and an overlying gate structure; depositing an oxidation barrier layer on the intermediate structure; and exposing the oxidation barrier layer to a reactant which reduces defects in the oxidation barrier layer. The existence of the oxidation barrier layer helps to prevent oxide encroachment and edge oxide thickening of the insulating layer during subsequent processing.