发明名称 |
Semiconductor device and manufacturing method therefor |
摘要 |
To provide a semiconductor device that permits free setting of characteristics of individual semiconductor elements which are mixedly mounted and have different characteristics, and is free of steps between formed semiconductor elements, in a manufacturing method for the semiconductor device, an n-type silicon layer is deposited on a p-type silicon substrate by epitaxial growth, and then an SOI layer is deposited thereon through the intermediary of a BOX layer. A junction transistor using a part of the n-type silicon layer as a channel region and a MOS transistor using the SOI layer are produced.
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申请公布号 |
US7064041(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20040853645 |
申请日期 |
2004.05.26 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
TANAKA HIROYUKI |
分类号 |
H01L21/28;H01L21/331;H01L21/02;H01L21/337;H01L21/76;H01L21/762;H01L21/768;H01L21/8232;H01L21/8234;H01L21/84;H01L27/06;H01L27/08;H01L27/088;H01L27/12;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L29/808 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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