| 摘要 |
In a microwave integrated circuit, a capacitance element is connected to the input side of each active device to remove noise signals. These capacitance elements and the wires, etc. for them have prevented the miniaturization of the chip since they require large areas on the chip. Further, in the case of a semiconductor active device, particularly a field-effect transistor, the gate metal formed on the step portions of the mesa may break or the gate metal may come into contact with the active layer during the "mesa-type device separation" process, resulting in degradation in the characteristics. To overcome the above problems, the present invention provides a device configuration in which: the capacitance element is formed right under one terminal of the semiconductor device; and one of the two electrodes of the capacitance element is connected to the underside of the terminal. Further, the gate metal is coated on planar portions of the semiconductor device surface, and the semiconductor substrate and portions of the active layers other than those in the transistor active region are removed from the rear portion of the device.
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