| 摘要 |
An example method of manufacturing a semiconductor device includes sequentially forming a gate insulating layer and a polysilicon layer on a semiconductor substrate having a first conductivity type, forming an amorphous silicon layer on a surface of the polysilicon layer by making the surface of the polysilicon layer amorphous, forming a crystallized polysilicon layer by respectively growing grains of the polysilicon layer and the amorphous silicon layer through a heat treatment process for the substrate, forming a gate by patterning the crystallized polysilicon layer, forming an LDD region having a second conductivity type in the substrate at both sides of the gate, forming a spacer at both sidewalls of the gate, and forming a source/drain region having the second conductivity type in the substrate at both sides of the spacer.
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