Thinly ground wafer form correction method for manufacturing semiconductor, involves heating thinly ground wafer and films upto temperature within range between room and fusing temperatures of tapes, for compensating deformation of wafer

摘要

The method involves applying a tape, backing film (3) and an adhesive film (4) sequentially on a thinly ground wafer (1). The wafer (1) and the films are heated upto a temperature within a range between a room temperature and a fusing temperature of the tape, for compensation of geometrical deformation of the wafer. The heating takes place with the help of a heating device and is regulated as a function of deformation of the wafer.